Memory devices and methods for managing error regions

ABSTRACT

Memory devices and methods are described that include a stack of memory dies and a logic die. Method and devices described include those that provide for repartitioning the stack of memory dies and storing the new partitions in a memory map. Repartitioning in selected configurations allows portions of memory to be removed from use without affecting the rest of the memory device. Additional devices, systems, and methods are disclosed.

PRIORITY APPLICATION

This application is a continuation of U.S. application Ser. No.16/430,121, filed Jun. 3, 2019, which is a continuation of U.S.application Ser. No. 15/927,679, filed Mar. 21, 2018, now issued as U.S.Pat. No. 10,347,356, which is a continuation of U.S. application Ser.No. 14/664,547, filed Mar. 20, 2015, now issued as U.S. Pat. No.9,953,724, which is a continuation of U.S. application Ser. No.13/784,510, filed Mar. 4, 2013, now issued as U.S. Pat. No. 8,990,647,which is a continuation of U.S. application Ser. No. 13/405,554, filedFeb. 27, 2012, now issued as U.S. Pat. No. 8,392,771, which is adivisional application of U.S. application Ser. No. 12/359,014, filedJan. 23, 2009, now issued as U.S. Pat. No. 8,127,185, all of which areincorporated herein by reference in their entirety.

TECHNICAL FIELD

Various embodiments described herein relate to apparatus, systems, andmethods associated with semiconductor memories.

BACKGROUND

Microprocessor technology has evolved at a faster rate than that ofsemiconductor memory technology. As a result, a mis-match in performanceoften exists between the modern host processor and the semiconductormemory subsystem to which the processor is mated to receive instructionsand data. For example, it is estimated that some high-end servers idlethree out of four clock cycles waiting for responses to memory requests.

In addition, the evolution of software application and operating systemtechnology has increased demand for higher-density memory subsystems asthe number of processor cores and threads continues to increase.However, current-technology memory subsystems often represent acompromise between performance and density. Higher bandwidths may limitthe number of memory cards or modules that may be connected in a systemwithout exceeding Joint Electron Device Engineering Council (JEDEC)electrical specifications.

Extensions to JEDEC interface standards such as dual data rate (DDR)synchronous dynamic random access memory (SDRAM) have been proposed butmay be generally found lacking as to future anticipated memorybandwidths and densities. Weaknesses include lack of memory poweroptimization and the uniqueness of the interface between the hostprocessor and the memory subsystem. The latter weakness may result in aneed to redesign the interface as processor and/or memory technologieschange.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of a memory system according to anembodiment of the invention.

FIG. 2 shows a cut-away conceptual view of a stacked-die 3D memory witha logic die according to an embodiment of the invention.

FIG. 3 shows a block diagram of a memory vault controller and associatedmodules according to an embodiment of the invention.

FIG. 4 shows a flow diagram of a method of operating a memory deviceaccording to an embodiment of the invention.

FIG. 5 shows a flow diagram of a method of making a memory deviceaccording to an embodiment of the invention.

FIG. 6 shows a block diagram of an information handling system accordingto an embodiment of the invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings that form a part hereof and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made.

FIG. 1 includes a block diagram of a memory device 100 according tovarious example embodiments of the current invention. The memory device100 operates to substantially concurrently transfer a plurality ofoutbound and/or inbound streams of commands, addresses, and/or databetween one or more originating devices and/or destination devices(e.g., one or more processors) and a set of stacked-array memory“vaults” 110. Increased memory system density, bandwidth, parallelism,and scalability may result.

Multi-die memory array embodiments aggregate control logic that isnormally located on each individual memory array die in previousdesigns. Subsections of a stacked group of dies, referred to in thepresent disclosure as memory vaults are shown as example vault 110 inFIG. 1 and as example vault 230 in FIG. 2. The memory vaults shown inthe illustrated examples share common control logic. The memory vaultarchitecture strategically partitions memory control logic to increaseenergy efficiency while providing a finer granularity of powered-onmemory banks. Embodiments shown also enable a standardized hostprocessor to memory system interface. The standardized interface mayreduce re-design cycle times as memory technology evolves.

FIG. 2 is a cut-away conceptual view of a stacked-die 3D memory array200 stacked with a logic die 202 to form a memory device 100 accordingto various example embodiments. The memory device 100 incorporates oneor more stacks of memory arrays 203 resulting in the stacked-die 3Dmemory array 200. Multiple memory arrays (e.g., the memory array 203)are fabricated onto each of a plurality of dies (e.g., the die 204). Thememory array dies are then stacked to form the stacked-die 3D memoryarray 200.

Each die of the stack is divided into multiple “tiles” (e.g., the tiles205A, 205B, and 205C associated with the stacked die 204). Each tile(e.g., the tile 205C) may include one or more memory arrays 203. Thememory arrays 203 are not limited to any particular memory technologyand may include dynamic random-access memory (DRAM), static randomaccess memory (SRAM), flash memory, etc.

A stacked set of memory array tiles 208 may include a single tile fromeach of the stacked dies (e.g., the tiles 212B, 212C and 212D, with thebase tile hidden from view in FIG. 1). Power, address, and/or data andsimilar common signals may traverse the stacked set of tiles 208 in the“Z” dimension 220 on conductive paths (e.g., the conductive path 224),such as “through-wafer interconnects” (TWIs). It is noted that a TWIneed not necessarily pass entirely through a particular wafer or die.

The stacked-die 3D memory array 200 in one configuration is partitionedinto a set of memory “vaults” (e.g., the memory vault 230). Each memoryvault includes a stacked set of tiles (e.g., the set of tiles 208), onetile from each of a plurality of stacked dies, together with a set ofTWIs to electrically interconnect the set of tiles 208. Each tile of thevault includes one or more memory arrays (e.g., the memory array 240).Although partitions into individual vaults 230 are described, the 3Dmemory array 200 can be partitioned in a number of other ways also.Other example partitions include partitioning by dies, tiles, etc.

A set of memory vaults 102, similar to the memory vaults 230 from FIG.2, is illustrated in FIG. 1 in context within the memory device 100. Thememory device 100 also includes a plurality 104 of memory vaultcontrollers (MVCs) (e.g., the MVC 106). Each MVC is communicativelycoupled to a corresponding memory vault (e.g., the memory vault 110 ofthe set 102) in a one-to-one relationship. Each MVC is thus capable ofcommunicating with a corresponding memory vault independently fromcommunications between other MVCs and their respective memory vaults.

The memory device 100 also includes a plurality of configurableserialized communication link interfaces (SCLIs) 112. The SCLIs 112 aredivided into an outbound group of SCLIs 113 and an inbound group ofSCLIs 115, where “outbound” and “inbound” directions are defined formthe perspective of the processor(s) 114. Each SCLI of the plurality ofSCLIs 112 is capable of concurrent operation with the other SCLIs.Together the SCLIs 112 communicatively couple the plurality of MVCs 104to one or more host processor(s) 114. The memory device 100 presents amulti-link, high-throughput interface to the host processor(s) 114.

The memory device 100 may also include a switch 116. In someembodiments, the switch 116 may comprise a matrix switch which mightalso be referred to as a cross connect switch. The switch 116 iscommunicatively coupled to the plurality of SCLIs 112 and to theplurality of MVCs 104. The switch 116 is capable of cross-connectingeach SCLI to a selected MVC. The host processor(s) 114 may thus accessthe plurality of memory vaults 102 across the plurality of SCLIs 112 ina substantially simultaneous fashion. This architecture can provide highprocessor-to-memory bandwidth for modern processor technologies,including multi-core technologies.

The memory device 100 may also include a memory fabric control register117 coupled to the switch 116. The memory fabric control register 117accepts memory fabric configuration parameters from a configurationsource and configures one or more components of the memory device 100 tooperate according to a selectable mode. For example, the switch 116 andeach of the plurality of memory vaults 102 and the plurality of MVCs 104may normally be configured to operate independently of each other inresponse to separate memory requests. Such a configuration can enhancememory system bandwidth as a result of the parallelism between the SCLIs112 and the memory vaults 102.

Alternatively, the memory device 100 may be reconfigured via the memoryfabric control register 117 to cause a subset of two or more of theplurality of memory vaults 102 and a corresponding subset of MVCs tooperate synchronously in response to a single request. The latterconfiguration may be used to access a data word that is wider than thewidth of a data word associated with a single vault. Such a word isherein referred to as a wide data word. This technique may decreaselatency. Other configurations may be enabled by loading a selected bitpattern into the memory fabric control register 117.

In one example the outbound SCLIs 113 may include a plurality ofoutbound differential pair serial paths (DPSPs) 128. The DPSPs 128 arecommunicatively coupled to the host processor(s) 114 and maycollectively transport an outbound packet. The outbound SCLI 113 mayalso include a deserializer 130 coupled to the plurality of outboundDPSPs 128. The outbound SCLI may also include a demultiplexer 138communicatively coupled to the deserializer 130. In one embodiment, theconfiguration of DSPSs, deserializers, and demultiplexers facilitatesefficient transfer of data packets or sub-packets. Similar to theoutbound SLCIs, in one embodiment, the inbound SCLIs and a similarconfiguration of DSPSs, serializers, and multiplexers facilitateefficient transfer of data packets or sub-packets.

FIG. 3 is a block diagram of an MVC (e.g., the MVC 106) and associatedmodules according to various example embodiments. The MVC 106 mayinclude a programmable vault control logic (PVCL) component 310. ThePVCL 310 interfaces the MVC 106 to the corresponding memory vault (e.g.,the memory vault 110). The PVCL 310 generates one or more controlsignals and/or timing signals associated with the corresponding memoryvault 110.

The PVCL 310 may be configured to adapt the MVC 106 to a memory vault110 of a selected configuration or a selected technology. Thus, forexample, the memory device 100 may initially be configured usingcurrently-available DDR2 DRAMs. The memory device 100 may subsequentlybe adapted to accommodate DDR3-based memory vault technology byreconfiguring the PVCL 310 to include DDR3 bank control and timinglogic.

The MVC 106 may also include a memory sequencer 314 communicativelycoupled to the PVCL 310. The memory sequencer 314 performs a memorytechnology dependent set of operations based upon the technology used toimplement the associated memory vault 110. The memory sequencer 314 may,for example, perform command decode operations, memory addressmultiplexing operations, memory address demultiplexing operations,memory refresh operations, memory vault training operations, and/ormemory vault prefetch operations associated with the correspondingmemory vault 110. In some embodiments, the memory sequencer 314 maycomprise a DRAM sequencer. In some embodiments, memory refreshoperations may originate in a separate refresh controller (not shown).

The memory sequencer 314 may be configured to adapt the memory device100 to a memory vault 110 of a selected configuration or technology. Forexample, the memory sequencer 314 may be configured to operatesynchronously with other memory sequencers associated with the memorydevice 100. Such a configuration may be used to deliver a wide data wordfrom multiple memory vaults to a cache line (not shown) associated withthe host processor(s) 114 in response to a single cache line request.

The MVC 106 may also include a write buffer 316. The write buffer 316may be coupled to the PVCL 310 to buffer data arriving at the MVC 106from the host processor(s) 114. The MVC 106 may further include a readbuffer 317. The read buffer 317 may be coupled to the PVCL 310 to bufferdata arriving at the MVC 106 from the corresponding memory vault 110.

The MVC 106 may also include an out-of-order request queue 318. Theout-of-order request queue 318 establishes an ordered sequence of readand/or write operations to the plurality of memory banks included in thememory vault 110. The ordered sequence is chosen to avoid sequentialoperations to any single memory bank in order to reduce bank conflictsand to decrease read-to-write turnaround time.

The MVC 106 may also include a memory map logic (MML) component 324. TheMML 324 manages a number of operations such as TWI repair operationsusing TWI repair logic 328, or other repair operations. In one example,the MML 324 tracks multiple error data for multiple portions of the 3Dmemory array 200. Use of error data is discussed in more detail below.The error rate for a number of different portions can be tracked usingthe MML 324. In one example, error data is tracked for each die 204.Other examples include tracking error data for each tile 205, each array203, etc.

In one example, portion being tracked is dynamic. For example, if a die204 has an error rate that exceeds a threshold, then a portion of thedie 204 may be selected for tracking. In another example, if an errorrate is below a threshold error rate of a portion such as a tile, thenthe MVEL may only track an error rate for the vault that includes thattile. In one example, tracked error rate information for a portion ofthe 3D memory array 200 is used to adjust (e.g., vary) refresh rates ofselected portions.

FIG. 3 shows an embodiment including a memory map 315. The memory map315 interacts with the MML 324, keeps track of various portions of the3D memory array 200, and stores characteristics such as error data thatis associated with a tracked portion. Examples include tracking errordata for individual dies 204, vaults 230, tiles 205, or other groupingsof a number of memory cells within the 3D memory array 200. In oneexample the memory map 315 keeps track of such information for more thanone portion concurrently. In one example, each MVC 106 includes aseparate memory map 315, although the invention is not so limited. Otherembodiments include a single memory map 315 on the logic chip 202, orother numbers of memory maps 315 to serve the 3D memory array 200.

Although error data is discussed as a characteristic that is tracked andused by the memory device 100, the invention is not so limited. Othercharacteristics specific to each portion are also tracked in variousembodiments. Other characteristics may include, but are not limited totemperature, power down state, and refresh rate.

As discussed above, in one embodiment, the error data being trackedincludes an error rate corresponding to an individual portion of the 3Dmemory array 200. Other error data such as error type, or cumulativeerrors are also possible error data. Error types include errors that arecorrectable using an error correction code (ECC), and hard errors suchas a failed through wafer interconnect. In one embodiment, the errorrate is compared to a threshold error rate. In one embodiment, if thethreshold error rate is exceeded, the memory portion is considered inneed of corrective action. Corrective action may include a number ofapproaches including implementing error correction algorithms, orremoving a bad region from operation. Corrective action usingrepartitioning of the 3D memory array 200 is discussed in more detailbelow.

In one example the error data is collected once, and the correctiveaction is implemented as a static correction. For example, the memorydevice 100 may be evaluated once during a power up operation, and errordata for various portions of the 3D memory array 200 is collected once.The memory map 315 is generated (e.g. created), and memory portions witherrors that exceed a threshold level are removed from operation. The MML324 then uses the memory map 315 to repartition the 3D memory array 200from a first partition state that existed previous to power up to asecond partition state that removes the bad memory portions fromoperation.

In another example, the error data is collected once just aftermanufacture, and the memory map 315 is generated to remove any defectivememory portions due to manufacturing errors. Examples of manufacturingyield errors include failed vias, TWIs, other lithography defects etc.Other errors may be due to variations in silicon, or processing thatproduce functioning portions with higher than normal error rates. Suchportions, functioning at lower than normal performance, are removed fromoperation in some embodiments, after first correcting the errors usingECC, then moving the data to a portion of the 3D memory array 200 thatis functioning at at least normal performance. After the data is moved,then the portion of the 3D memory array 200 with the unacceptable errorrate is removed from use in the memory map 315, and the 3D memory array200 is repartitioned.

In one example the error data is collected dynamically during operationof the memory device 100, and the corrective action is implementeddynamically in response to changing error data. Dynamically changingconditions of the 3D memory array 200 can be from a number of sources,including electromigration of conductors, thermal damage over time, etc.In dynamic embodiments, as a condition of an individual memory portionchanges, the memory map 315 is updated, and corrective actions areimplemented by the MML 324 as needed. Similar to embodiments describedabove, corrective actions include moving data, removing failed memoryportions, and repartitioning the 3D memory array 200.

FIG. 4 illustrates a method of operating a memory including dynamicrepartitioning of a 3D memory array 200. In operation 410, error data iscollected from a number of different first partitions of a stack ofmemory dies. First partitions may correspond to some of the listedmemory portions such as vaults 110, tiles 205, etc, however theinvention is not so limited. Error data may include simply indicatingthat a first partition is not functioning, or the error data may includean error rate for a first partition. As discussed above, other types oferror data are also possible.

In operation 420, a memory map 315 is generated (e.g., created) within alocally attached logic die such as logic die 202 using the error datacollected in operation 410. In operation 430, the memory map 315 ischanged to repartition the stack of memory dies to form a number ofsecond partitions during operation of the memory device 100 if the errordata exceeds a threshold.

Embodiments described above discuss removal of non-functioningpartitions from operation. Other embodiments salvage portions ofpartitions that are still functional. In one embodiment, portions offirst partitions that are still functional are combined to form secondpartitions. For example, if a TWI fails in a memory vault 110, the lowerportion of the vault 110 may remain functional. Two or more lowerportions of such vaults 110 can be combined and repartitioned tofunction as a whole vault in a second partition. In such an example, twoor more memory sequencers 314 can be synched to operate as a singlevault.

In one embodiment, the 3D memory array 200 is fabricated with sparememory portions. Examples of spare memory portions include spare memorydies 204, spare memory vaults 110, spare memory tiles 205, etc. In oneexample the spare memory regions are partitioned as spares in a firstpartition, and recorded as such in the memory map 315. In a staticrepartition memory example, upon power up, or after manufacture, if“primary” portions (as opposed to spare portions) of the 3D memory array200 are bad, and removed from use, then one or more spare memoryportions are mapped into use in the repartitioning process. Likewise, ina dynamic repartition memory example, during memory operation, once amemory portion meets removal criteria, such as error rate exceeding athreshold, an amount of spare memory portions necessary to make up thedifference are mapped into use, and the 3D memory array 200 isrepartitioned to include the spares.

In one example, after repartitioning, there may not be enough sparememory portions to bring the 3D memory array 200 back up to a particularmemory capacity. For example, the 3D memory array 200 may end up shortone or more vaults 110. In other embodiments without spare memoryportions, any repartitioning will result in less memory capacity thanwas designed in manufacturing.

FIG. 5 illustrates a manufacturing process that sorts memory aftermanufacture according to available bandwidth. In operation 510, a numberof stacks of memory dies are formed, and in operation 520 a logic die isstacked with the stack of memory dies. Each stack of memory dies ismanufactured with a first partition structure. Each stack of memory diesis then evaluated in operation 530 by collecting (e.g., gathering,generating, etc.) error data from different memory portions of thestacks of memory dies. In operation 540, each stack of memory dies isrepartitioned to remove from operation memory portions with error datathat does not meet a standard. As discussed in examples above, errordata may not meet a standard if a portion of the stack of memory diessimply does not function. In other examples, error data may not meet astandard if an error rate exceeds a threshold error rate of a portion ofthe stack of memory dies.

In operation 550, the stacks of memory dies are sorted according toavailable bandwidth as determined by remaining memory capacity of eachof the stacks of memory dies. As discussed above, in embodiments withoutspare memory portions, removal of a portion of the stack can result inthe same read bandwidth, but the write bandwidth is slightly diminished.Even in embodiments with spare memory portions, the spare portions maybe exceeded, and the resulting stack may have diminished bandwidth.

Sorting the stacks of memory dies according to available bandwidth issimilar to sorting processors by demonstrated speed after manufacture.Stacks of memory dies can then be matched with a computing system thatonly requires the particular sorted memory bandwidth. For example, apersonal computer can be marketed with a selected processor speed, and aselected memory bandwidth. The resulting combination will provide acomputing speed based for the user than depends both on processor speedand memory bandwidth.

This method makes manufacturing yield less of an all or nothing issuefor the memory manufacturer. A memory device 100 as described inembodiments above need not be perfect, and as a result of features suchas an attached logic chip and a memory map, a large percentage ofoperational memory bandwidth is still available and can be marketed assuch to an end user. Having the memory map 315 stored locally on thememory device 100 within a locally mounted logic chip 202 allows thememory device 100 to optimize memory operation independent of theprocessor 114.

The apparatus and systems of various embodiments may be useful inapplications other than a high-density, multi-link, high-throughputsemiconductor memory subsystem. Thus, various embodiments of theinvention are not to be so limited. The illustrations of the memorydevice 100 are intended to provide a general understanding of thestructure of various embodiments. They are not intended to serve as acomplete description of all the elements and features of apparatus andsystems that might make use of the structures described herein.

The novel apparatus and systems of various embodiments may comprise orbe incorporated into electronic circuitry used in computers,communication and signal processing circuitry, single-processor ormulti-processor modules, single or multiple embedded processors,multi-core processors, data switches, and other information handlingsystems.

Examples of such systems, include, but are not limited to televisions,cellular telephones, personal data assistants (PDAs), personal computers(e.g., laptop computers, desktop computers, handheld computers, tabletcomputers, etc.), workstations, radios, video players, audio players(e.g., MP3 (Motion Picture Experts Group, Audio Layer 3) players),vehicles, medical devices (e.g., heart monitor, blood pressure monitor,etc.), set top boxes, and others.

A high level example of a personal computer is included in FIG. 6 toshow a higher level device application for the present invention. FIG. 6is a block diagram of an information handling system 600 incorporatingat least one memory device 606 according to an embodiment of theinvention.

In this example, information handling system 600 comprises a dataprocessing system that includes a system bus 602 to couple the variouscomponents of the system. System bus 602 provides communications linksamong the various components of the information handling system 600 andmay be implemented as a single bus, as a combination of busses, or inany other suitable manner.

Chip assembly 604 is coupled to the system bus 602. Chip assembly 504may include any circuit or operably compatible combination of circuits.In one embodiment, chip assembly 604 includes a processor 608 ormultiple processors that can be of any type. As used herein, “processor”means any type of computational circuit such as, but not limited to, amicroprocessor, a microcontroller, a graphics processor, a digitalsignal processor (DSP), or any other type of processor or processingcircuit. As used herein, “processor” includes multiple processors ormultiple processor cores.

In one embodiment, a memory device 606 is included in the chip assembly604. Those skilled in the art will recognize that a wide variety ofmemory device configurations may be used in the chip assembly 604. Amemory device such as a DRAM that is continually refreshed duringoperation is described in embodiments above. One example of a DRAMdevice includes a stacked memory chip 3D memory device with anintegrated logic chip as described in embodiments above. Memory 606 canalso include non-volatile memory such as flash memory.

Information handling system 600 may also include an external memory 611,which in turn can include one or more memory elements suitable to theparticular application, such as one or more hard drives 612, and/or oneor more drives that handle removable media 613 such as flash memorydrives, compact disks (CDs), digital video disks (DVDs), and the like.

Information handling system 600 may also include a display device 609such as a monitor, additional peripheral components 610, such asspeakers, etc. and a keyboard and/or controller 614, which can include amouse, trackball, game controller, voice-recognition device, or anyother device that permits a system user to input information into andreceive information from the information handling system 600.

While a number of embodiments of the invention are described, the abovelists are not intended to be exhaustive. Although specific embodimentshave been illustrated and described herein, it will be appreciated bythose of ordinary skill in the art that any arrangement that iscalculated to achieve the same purpose may be substituted for thespecific embodiment shown. This application is intended to cover anyadaptations or variations of the present invention. It is to beunderstood that the above description is intended to be illustrative andnot restrictive. Combinations of the above embodiments, and otherembodiments, will be apparent to those of skill in the art uponreviewing the above description.

What is claimed is:
 1. A memory device, comprising: a stack of multiplememory die electrically connected with one another by through waferinterconnects extending through the stack of multiple memory die, thestack of multiple memory die comprising multiple partitions, eachpartition including one or more arrays from each of two or more memorydie of the stack of multiple memory die; and control logic operablycoupled to the stack of multiple memory die, the control logic operableto monitor portions of the stack of multiple memory die to collect errordata indicating defective portions within one or more of the partitions,and to remove a defective portion from one or more of the multiplepartitions; and wherein the stack of multiple memory die comprisesmultiple first partitions established according to a first memory map,each partition including one or more arrays from each of two or morememory die of the stack of multiple memory die.
 2. The memory device ofclaim 1, wherein the control logic is operable to collect the error datafrom different portions of the multiple partitions to identify locationsof defective memory portions.
 3. The memory device of claim 1, whereinthe control logic is operable to collect the error data from differentportions of the multiple partitions to identify corresponding errorrates in the different memory portions.
 4. The memory device of claim 3,wherein the control logic is operable to repartition the stack ofmultiple memory die in response to the collected error data fromdifferent portions of the multiple partitions to define a second memorymap to remove a defective portion of at least one of the multiple firstpartitions from operation.
 5. The memory device of claim 2, wherein eachof the multiple memory die includes multiple tiles of memory cells andwherein the control logic is operable to repartition the multiple memorydie to remove a defective memory tile from a selected partition.
 6. Thememory device of claim 5, wherein the control logic is operable torepartition the stack of multiple memory die to replace a defectivememory tile from the selected partition with a spare memory tile.
 7. Thememory device of claim 2, wherein the control logic is configured toidentify errors that are correctable using an error correction code(ECC).
 8. The memory device of claim 4, wherein the control logic isconfigured to repartition the stacked multiple memory die when thecollected error data in a partition identifies errors exceeding an errorrate threshold.
 9. The memory device of claim 2, wherein the operabilityof the control logic to collect error data comprises collection of dataof a defective through wafer interconnect.
 10. The memory device ofclaim 2, wherein the stack of multiple memory die includes a sparememory die, and wherein the spare memory die is not included in thefirst partition defined by the first memory map.
 11. A memory device,comprising: a logic die containing control logic circuitry; a stack ofDRAM memory die, wherein each DRAM die of the stack of DRAM memory dieis interconnected with at least one other DRAM die of the stack of DRAMmemory die by through multiple wafer interconnects; and the stack ofDRAM memory die allocated according to a first partition stateestablishing multiple first partitions, each partition including one ormore arrays from each of two or more DRAM die of the stack of DRAMmemory die; and wherein the control logic circuitry is operable tomonitor portions of the stack of DRAM memory die to collect error dataindicating a defective portion within one or more of the partitions, andto remove the defective portion from one or more of the multiple firstpartitions.
 12. The memory device of claim 11, wherein the control logiccircuitry is operable to collect the error data from different portionsof the multiple first partitions to identify the defective memoryportion.
 13. The memory device of claim 11, wherein the control logiccircuitry is operable to collect the error data from different portionsof the multiple first partitions to identify corresponding error ratesin the different memory portions.
 14. The memory device of claim 13,wherein the control logic circuitry is operable to repartition the stackof DRAM memory die from the first partition state to second partitionstate in response to the collected error rates from different portionsof the first partitions, in order to remove a defective portion of atleast one of the multiple first partitions from operation.
 15. Thememory device of claim 14, wherein each DRAM memory die of the stack ofDRAM memory die includes multiple tiles of memory cells and wherein thecontrol logic circuitry is operable to repartition the stack of DRAMmemory die to the second partition state to remove a defective memorytile from a selected partition.
 16. The memory device of claim 15,wherein the control logic circuitry is operable to repartition the stackof DRAM memory die to replace a defective memory tile from the selectedpartition with a spare memory tile.
 17. The memory device of claim 11,wherein one or more of the multiple first partitions is configured bythe control logic to operate in parallel to another of the multiplefirst partitions in response to separate memory requests.
 18. The memorydevice of claim 13, wherein the control logic is configured torepartition the stack of DRAM memory die when the collected error ratedata in a partition exceeds an error rate threshold.
 19. The memorydevice of claim 11, wherein the operability of the logic die to collecterror data comprises operability to collect data of defective throughwafer interconnects.
 20. The memory device of claim 11, wherein thestack of DRAM memory die includes a spare DRAM memory die, and whereinthe spare DRAM memory die is not included in any of the multiple firstpartitions.